Characteristics of LDR

LDR’s are light dependent devices whose resistance is decreased when light falls on them and that is increased in the dark. When a light dependent resistor is kept in dark, its resistance is very high. This resistance is called as dark resistance. It can be as high as 10¹² Ω and if the device is allowed to absorb light its resistance will be decreased drastically. If a constant voltage is applied to it and intensity of light is increased the current starts increasing. Figure below shows resistance vs. illumination curve for a particular LDR.

Photocells or LDR’s are non linear devices. There sensitivity varies with the wavelength of light incident on them. Some photocells might not at all response to a certain range of wavelengths. Based on the material used different cells have different spectral response curves.

When light is incident on a photocell it usually takes about 8 to 12 ms for the change in resistance to take place, while it takes one or more seconds for the resistance to rise back again to its initial value after removal of light. This phenomenon is called as resistance recovery rate. This property is used in audio compressors. Also, LDR’s are less sensitive than photo diodes and photo transistor. (A photo diode and a photocell (LDR) are not the same, a photo-diode is a p-n junction semiconductor device that converts light to electricity, whereas a photocell is a passive device, there is no p-n junction in this nor it “converts” light to electricity). Types of Light Dependent Resistors: Based on the materials used they are classified as:

1. Intrinsic photo resistors (Un doped semiconductor): These are made of pure semiconductor materials such as silicon or germanium. Electrons get excited from valance band to conduction band when photons of enough energy fall on it and number charge carriers is increased.
2. Extrinsic photo resistors: These are semiconductor materials doped with impurities which are called as dopants. Theses dopants create new energy bands above the valence band which are filled with electrons. Hence this reduces the band gap and less energy is required in exciting them. Extrinsic photo resistors are generally used for long wavelengths.

Working principle of photo sensor

A light dependent resistor works on the principle of photo conductivity.




Photo conductivity is an optical phenomenon in which the materials conductivity is increased when light is absorbed by the material. When light falls i.e. when the photons fall on the device, the electrons in the valence band of the semiconductor material are excited to the conduction band. These photons in the incident light should have energy greater than the band gap of the semiconductor material to make the electrons jump from the valence band to the conduction band. Hence when light having enough energy strikes on the device, more and more electrons are excited to the conduction band which results in large number of charge carriers. The result of this process is more and more current starts flowing throgh the device when the circuit is closed and hence it is said that the resistance of the device has been decreased. This is the most common working principle of LDR

About Photo resistor

A photoresistor (or light-dependent resistor, LDR, or photocell) is a light-controlled variable resistor. The resistance of a photoresistor decreases with increasing incident light intensity; in other words, it exhibits photoconductivity. A photoresistor can be applied in light-sensitive detector circuits, and light- and dark-activated switching circuits.

Type	Passive
Working principle	Photoconductivity
Electronic symbol
The symbol for a photoresistor

A photoresistor is made of a high resistance semiconductor. In the dark, a photoresistor can have a resistance as high as several megohms (MΩ), while in the light, a photoresistor can have a resistance as low as a few hundred ohms. If incident light on a photoresistor exceeds a certain frequency, photons absorbed by the semiconductor give bound electrons enough energy to jump into the conduction band. The resulting free electrons (and their hole partners) conduct electricity, thereby lowering resistance. The resistance range and sensitivity of a photoresistor can substantially differ among dissimilar devices. Moreover, unique photoresistors may react substantially differently to photons within certain wavelength bands.

A photoelectric device can be either intrinsic or extrinsic. An intrinsic semiconductor has its own charge carriers and is not an efficient semiconductor, for example, silicon. In intrinsic devices the only available electrons are in the valence band, and hence the photon must have enough energy to excite the electron across the entire bandgap. Extrinsic devices have impurities, also called dopants, added whose ground state energy is closer to the conduction band; since the electrons do not have as far to jump, lower energy photons (that is, longer wavelengths and lower frequencies) are sufficient to trigger the device. If a sample of silicon has some of its atoms replaced by phosphorus atoms (impurities), there will be extra electrons available for conduction. This is an example of an extrinsic semiconductor.^[1]